Global numerical simulation of heat and mass transfer during SiC bulk crystal PVT growth
Selder M, Kadinski L, Durst F, Straubinger T, Hofmann HD, Wellmann P (2000)
Publication Language: English
Publication Status: Published
Publication Type: Journal article, Original article
Publication year: 2000
Journal
Publisher: Trans Tech Publications
City/Town: Switzerland
Book Volume: 338-342
Pages Range: 31-34
Conference Proceedings Title: Materials Science Forum (Volumes 338-342)
Event location: Research Triangle Park, North Carolina
DOI: 10.4028/www.scientific.net/MSF.338-342.31
Abstract
Modeling results of a global heat and mass transfer analysis of the SIC bulk growth process in an inductively heated PVT reactor are presented. The modeling approach is summarized and its reliability is shown by comparing experimental data to simulation results. The temporal evolution of the temperature gradients at the crystal surface during the growth process is analyzed and related to the radial growth rate distribution. The species fluxes at the surface of the source are investigated.
Authors with CRIS profile
Franz Durst
Technische Fakultät
Peter Wellmann
Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)
How to cite
APA:
Selder, M., Kadinski, L., Durst, F., Straubinger, T., Hofmann, H.-D., & Wellmann, P. (2000). Global numerical simulation of heat and mass transfer during SiC bulk crystal PVT growth. Materials Science Forum, 338-342, 31-34. https://doi.org/10.4028/www.scientific.net/MSF.338-342.31
MLA:
Selder, Markus, et al. "Global numerical simulation of heat and mass transfer during SiC bulk crystal PVT growth." Materials Science Forum 338-342 (2000): 31-34.
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