In situ visualization of SiC physical vapor transport crystal growth
Wellmann P, Herro ZG, Winnacker A, Püsche R, Hundhausen M, Masri P, Kulik A, Bogdanov M, Karpov S, Ramm M, Makarov Y (2005)
Publication Language: English
Publication Type: Journal article
Publication year: 2005
Journal
Publisher: Elsevier
Book Volume: 275
Pages Range: e1807–e1812
Journal Issue: 1-2
DOI: 10.1016/j.jcrysgro.2004.11.253
Abstract
We review a digital X-ray imaging technique which permits in situ 2D imaging of the crucible interior during physical vapor transport growth of SiC. In addition, we use 13C-labeling experiments to determine the mass transport paths in the growth cell interior. The combination of both experimental techniques enabled the analysis of the global SiC growth process like determination of growth rate, quantitative analysis of the evolution of the source material morphology, interaction of Si- and C-containing gas species with the graphite crucible wall, etc. The data will be used for comparison with numerical modeling of the SiC growth process including calculation of temperature field, mass transport and changes of the source material morphology, i.e. porosity and graphitization. In addition to the application of X-ray imaging for fundamental growth studies, monitoring of routine growth runs will also be pointed out. © 2004 Elsevier B.V. All rights reserved.
Authors with CRIS profile
Peter Wellmann
Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)
Albrecht Winnacker
Technische Fakultät
Martin Hundhausen
Lehrstuhl für Laserphysik
Involved external institutions
University of Montpellier / Université Montpellier
France (FR)
Soft-Impact, Ltd.
Russian Federation (RU)
Semiconductor Technology Research, Inc.
United States (USA) (US)
France (FR)
Soft-Impact, Ltd.
Russian Federation (RU)
Semiconductor Technology Research, Inc.
United States (USA) (US)
How to cite
APA:
Wellmann, P., Herro, Z.G., Winnacker, A., Püsche, R., Hundhausen, M., Masri, P.,... Makarov, Y. (2005). In situ visualization of SiC physical vapor transport crystal growth. Journal of Crystal Growth, 275(1-2), e1807–e1812. https://doi.org/10.1016/j.jcrysgro.2004.11.253
MLA:
Wellmann, Peter, et al. "In situ visualization of SiC physical vapor transport crystal growth." Journal of Crystal Growth 275.1-2 (2005): e1807–e1812.
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