Raman spectroscopy and electrical transport studies of free-standing epitaxial graphene: Evidence of an AB-stacked bilayer
Shivaraman S, Jobst J, Waldmann D, Weber HB, Spencer M (2013)
Publication Status: Published
Publication Type: Journal article, Letter
Publication year: 2013
Journal
Publisher: American Physical Society
Book Volume: 87
Journal Issue: 19
DOI: 10.1103/PhysRevB.87.195425
Abstract
We fabricate free-standing graphene structures from epitaxial graphene on silicon carbide using a photoelectrochemical (PEC) etching process. A combination of Raman spectroscopy and magnetotransport measurements was used to investigate multiterminal devices in various geometries. From the analysis of Raman data and Shubnikov-de Haas oscillations, we conclude that the buffer layer is converted into a graphene layer and, thus, monolayer graphene on SiC gets converted to a free-standing AB-stacked bilayer. The bilayer exhibits inversion-symmetry breaking because of differential doping between the layers. Additionally, lateral inhomogeneities exist in the form of domains with nonuniform mobility. The same PEC process on a pure buffer layer, however, does not yield monolayer graphene.
Authors with CRIS profile
Additional Organisation(s)
Involved external institutions
United States (USA) (US)How to cite
APA:
Shivaraman, S., Jobst, J., Waldmann, D., Weber, H.B., & Spencer, M. (2013). Raman spectroscopy and electrical transport studies of free-standing epitaxial graphene: Evidence of an AB-stacked bilayer. Physical Review B, 87(19). https://doi.org/10.1103/PhysRevB.87.195425
MLA:
Shivaraman, Shriram, et al. "Raman spectroscopy and electrical transport studies of free-standing epitaxial graphene: Evidence of an AB-stacked bilayer." Physical Review B 87.19 (2013).
BibTeX: Download