Fauster T (1991)
Publication Status: Published
Publication Type: Journal article
Publication year: 1991
Publisher: American Physical Society
Book Volume: 44
Pages Range: 1954-1957
The adsorption of NH3 and NO on Si(100)-(2 x 1) surfaces at room temperature and the stepwise nitridation have been studied by high-resolution Si 2p core-level photoemission spectroscopy. Both molecules adsorb dissociatively, but only for NO does a reaction occur beyond the first monolayer. For the growth of stoichiometric silicon nitride, annealing to 1200 K is necessary.
APA:
Fauster, T. (1991). NH3 AND NO INTERACTION WITH SI(100)-(2X1) SURFACES. Physical Review B, 44, 1954-1957. https://doi.org/10.1103/PhysRevB.44.1954
MLA:
Fauster, Thomas. "NH3 AND NO INTERACTION WITH SI(100)-(2X1) SURFACES." Physical Review B 44 (1991): 1954-1957.
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