Electronic structure of SiC(0001) surfaces studied by two-photon photoemission

Wiets M, Weinelt M, Fauster T (2003)


Publication Status: Published

Publication Type: Journal article

Publication year: 2003

Journal

Publisher: American Physical Society

Book Volume: 68

Article Number: 125321

DOI: 10.1103/PhysRevB.68.125321

Abstract

Two-photon photoemission has been used to study the electronic structure of the valence and conduction bands at SiC(0001) surfaces. The various surface reconstructions show distinctly different spectra and work functions. The ionization energy is found independent of polytype and surface reconstruction to be 6.9+/-0.2 eV. For the (root3xroot3)R30degrees surface the occupied and unoccupied Mott-Hubbard bands are found with a splitting U=2.4+/-0.1 eV. A long-lived exciton between the Mott-Hubbard bands is identified with a binding energy of similar to0.7 eV.

Authors with CRIS profile

How to cite

APA:

Wiets, M., Weinelt, M., & Fauster, T. (2003). Electronic structure of SiC(0001) surfaces studied by two-photon photoemission. Physical Review B, 68. https://doi.org/10.1103/PhysRevB.68.125321

MLA:

Wiets, Michael, Martin Weinelt, and Thomas Fauster. "Electronic structure of SiC(0001) surfaces studied by two-photon photoemission." Physical Review B 68 (2003).

BibTeX: Download