Unoccupied dimer-bond state at Si(001) surfaces

Fauster T, Tanaka S, Tanimura K (2011)

Publication Status: Published

Publication Type: Journal article

Publication year: 2011


Publisher: American Physical Society

Book Volume: 84

Article Number: 235444

DOI: 10.1103/PhysRevB.84.235444


Two-photon photoemission is used to identify the unoccupied dimer-bond state on the Si(001) surface at an energy 2.83 eV above the valence-band maximum. A strong resonance enhancement is found for excitation from the occupied dangling-bond state. The azimuthal and polarization dependence proves the orientation of the observed state along the dimer axis. The dispersion is dominated by the occupied initial state described by -0.50 free-electron masses in one- and two-photon photoemission.

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Fauster, T., Tanaka, S., & Tanimura, K. (2011). Unoccupied dimer-bond state at Si(001) surfaces. Physical Review B, 84.


Fauster, Thomas, Shinichiro Tanaka, and Katsumi Tanimura. "Unoccupied dimer-bond state at Si(001) surfaces." Physical Review B 84 (2011).

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