Spin-split silicon states at step edges of Si(553)-Au

Biedermann K, Regensburger S, Fauster T, Himpsel FJ, Erwin SC (2012)

Publication Status: Published

Publication Type: Journal article

Publication year: 2012


Publisher: American Physical Society

Book Volume: 85

Article Number: 245413

DOI: 10.1103/PhysRevB.85.245413


The quasi-one-dimensional Si(553)-Au surface is investigated with time-resolved two-photon photoemission and laser-based photoemission. Several occupied and unoccupied states inside and outside the bulk band gap of silicon were found near the center of the surface Brillouin zone. A nondispersing unoccupied state 0.62 eV above the Fermi level with a lifetime of 125 fs matches the spin-split silicon step-edge state predicted by density functional theory calculations. Two occupied bands can be associated with the bands calculated for nonpolarized step-edge atoms.

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Biedermann, K., Regensburger, S., Fauster, T., Himpsel, F.J., & Erwin, S.C. (2012). Spin-split silicon states at step edges of Si(553)-Au. Physical Review B, 85. https://doi.org/10.1103/PhysRevB.85.245413


Biedermann, Kerstin, et al. "Spin-split silicon states at step edges of Si(553)-Au." Physical Review B 85 (2012).

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