Spin-split silicon states at step edges of Si(553)-Au

Biedermann K, Regensburger S, Fauster T, Himpsel FJ, Erwin SC (2012)

Publication Status: Published

Publication Type: Journal article

Publication year: 2012

Journal

Physical Review B American Physical Society

Publisher: American Physical Society

Book Volume: 85

Article Number: 245413

DOI: 10.1103/PhysRevB.85.245413

Abstract

The quasi-one-dimensional Si(553)-Au surface is investigated with time-resolved two-photon photoemission and laser-based photoemission. Several occupied and unoccupied states inside and outside the bulk band gap of silicon were found near the center of the surface Brillouin zone. A nondispersing unoccupied state 0.62 eV above the Fermi level with a lifetime of 125 fs matches the spin-split silicon step-edge state predicted by density functional theory calculations. Two occupied bands can be associated with the bands calculated for nonpolarized step-edge atoms.

Authors with CRIS profile

Kerstin Biedermann Lehrstuhl für Festkörperphysik Stefan Regensburger Chair of Applied Physics (LAP) Thomas Fauster Lehrstuhl für Festkörperphysik

Involved external institutions

U.S. Naval Research Laboratory US United States (USA) (US) University of Wisconsin - Madison US United States (USA) (US)

How to cite

APA:

Biedermann, K., Regensburger, S., Fauster, T., Himpsel, F.J., & Erwin, S.C. (2012). Spin-split silicon states at step edges of Si(553)-Au. Physical Review B, 85. https://doi.org/10.1103/PhysRevB.85.245413

MLA:

Biedermann, Kerstin, et al. "Spin-split silicon states at step edges of Si(553)-Au." Physical Review B 85 (2012).

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