Niesner D, Otto S, Hermann V, Fauster T, Menshchikova TV, Eremeev SV, Aliev ZS, Amiraslanov IR, Babanly MB, Echenique PM, Chulkov EV (2014)
Publication Status: Published
Publication Type: Journal article
Publication year: 2014
Publisher: American Physical Society
Book Volume: 89
Article Number: 081404
DOI: 10.1103/PhysRevB.89.081404
Time-resolved two-photon photoemission was used to study the electronic structure and dynamics at the surface of SnSb2Te4, a p-type topological insulator. The Dirac point is found 0.32 +/- 0.03 eV above the Fermi level. Electrons from the conduction band minimum are scattered on a time scale of 43 +/- 4 fs to the Dirac cone. From there they decay to the partly depleted valence band with a time constant of 78 +/- 5 fs. The significant interaction of the Dirac states with bulk bands is attributed to their bulk penetration depth of similar to 3 nm as found from density functional theory calculations.
APA:
Niesner, D., Otto, S., Hermann, V., Fauster, T., Menshchikova, T.V., Eremeev, S.V.,... Chulkov, E.V. (2014). Bulk and surface electron dynamics in a p-type topological insulator SnSb2Te4. Physical Review B, 89. https://doi.org/10.1103/PhysRevB.89.081404
MLA:
Niesner, Daniel, et al. "Bulk and surface electron dynamics in a p-type topological insulator SnSb2Te4." Physical Review B 89 (2014).
BibTeX: Download