Implication of oxygen vacancies on current conduction mechanisms in TiN/Zr1-xAlxO2/TiN metal-insulator-metal structures

Paskaleva A, Lemberger M, Bauer AJ, Frey L (2011)

Publication Status: Published

Publication Type: Journal article, Original article

Publication year: 2011

Journal

Journal of Applied Physics AIP Publishing

Book Volume: 109

Article Number: 076101

Journal Issue: 7

DOI: 10.1063/1.3565056

Abstract

The dominating conduction mechanisms through TiN/Zr1$-$xAlxO2/TiN capacitors have been investigated over a wide temperature range (25 K to 430 K) in order to obtain information about the traps which cause the current transport. Single positive charged oxygen vacancies are the principal transport sites which participate in all mechanisms observed. However, the conduction mostly defined by intrinsic traps could also be strongly influenced by defects originating from undesirable high-k/metal gate interface reactions which could act as real traps or as transport sites.

Authors with CRIS profile

Lothar Frey Lehrstuhl für Elektronische Bauelemente

Additional Organisation(s)

Exzellenz-Cluster Engineering of Advanced Materials (EAM)

Involved external institutions

Bulgarian Academy of Sciences (BAS) / Българска академия на науките BG Bulgaria (BG) Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie (IISB) DE Germany (DE)

How to cite

APA:

Paskaleva, A., Lemberger, M., Bauer, A.J., & Frey, L. (2011). Implication of oxygen vacancies on current conduction mechanisms in TiN/Zr1-xAlxO2/TiN metal-insulator-metal structures. Journal of Applied Physics, 109(7). https://doi.org/10.1063/1.3565056

MLA:

Paskaleva, A., et al. "Implication of oxygen vacancies on current conduction mechanisms in TiN/Zr1-xAlxO2/TiN metal-insulator-metal structures." Journal of Applied Physics 109.7 (2011).

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