Thermal Expansion Coefficients of 6H Silicon Carbide

Stockmeier M, Sakwe A, Hens P, Wellmann P, Hock R, Magerl A (2009)


Publication Language: English

Publication Status: Published

Publication Type: Journal article, Original article

Publication year: 2009

Journal

Book Volume: 600-603

Pages Range: 517-520

Conference Proceedings Title: Materials Science Forum (Volumes 600-603)

DOI: 10.4028/www.scientific.net/MSF.600-603.517

Abstract

The thermal expansion of 6H Silicon Carbide with different dopant concentrations of aluminum and nitrogen was determined by lattice parameter measurements at temperatures from 300 K to 1575 K. All samples have a volume of at least 6 x 6 x 6 mm(3) to ensure that bulk properties are measured. The measurements were performed with a triple axis diffractometer with high energy x-rays with a photon energy of 60 keV. The values for the thermal expansion coefficients along the a- and c-direction, alpha(11) and alpha(33), are in the range of 3.10(-6) K(-1) for 300 K and 6.10(-6) K(-1) for 1550 K. At high temperatures the coefficients for aluminum doped samples are approximately 0.5.10(-6) K(-1) lower than for the nitrogen doped crystal. alpha(11) and alpha(33) appear to be isotropic.

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How to cite

APA:

Stockmeier, M., Sakwe, A., Hens, P., Wellmann, P., Hock, R., & Magerl, A. (2009). Thermal Expansion Coefficients of 6H Silicon Carbide. Materials Science Forum, 600-603, 517-520. https://doi.org/10.4028/www.scientific.net/MSF.600-603.517

MLA:

Stockmeier, Matthias, et al. "Thermal Expansion Coefficients of 6H Silicon Carbide." Materials Science Forum 600-603 (2009): 517-520.

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