Comparative study of n-LIGBT and n-LDMOS structures on 4H-SiC

Häublein V, Temmel G, Mitlehner H, Rattmann G, Strenger C, Hürner A, Bauer A, Ryssel H, Frey L (2013)

Publication Status: Published

Publication Type: Authored book, Volume of book series

Publication year: 2013

Pages Range: 887-890

Event location: St. Petersburg

ISBN: 9783037856246

DOI: 10.4028/www.scientific.net/MSF.740-742.887

Abstract

N-LDMOS and n-LIGBT structures were manufactured with the same dimensions on a 4H-SiC wafer in order to allow for a direct comparison. The comparison of the devices includes output and transfer characteristics, blocking characteristics, and temperature behavior. © (2013) Trans Tech Publications, Switzerland.

Authors with CRIS profile

Andreas Hürner Lehrstuhl für Elektronische Bauelemente Heiner Ryssel Technische Fakultät Lothar Frey Lehrstuhl für Elektronische Bauelemente

Related research project(s)

SiC-BIFET: Untersuchungen zu bipolaren SiC-Feldeffekttransistoren für das Mittelspannungsnetz Sept. 1, 2010 - July 10, 2017

Involved external institutions

Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie (IISB) DE Germany (DE)

How to cite

APA:

Häublein, V., Temmel, G., Mitlehner, H., Rattmann, G., Strenger, C., Hürner, A.,... Frey, L. (2013). Comparative study of n-LIGBT and n-LDMOS structures on 4H-SiC.

MLA:

Häublein, Volker, et al. Comparative study of n-LIGBT and n-LDMOS structures on 4H-SiC. 2013.

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