Effect of shallow n-doping on field effect mobility in p-doped channels of 4H-SiC MOS field effect transistors
Noll S, Rambach M, Grieb M, Scholten D, Bauer A, Frey L (2014)
Publication Status: Published
Publication Type: Authored book, Volume of book series
Publication year: 2014
Publisher: Trans Tech Publications Ltd
Pages Range: 702-705
Event location: Miyazaki
ISBN: 9783038350101
DOI: 10.4028/www.scientific.net/MSF.778-780.702
Abstract
A high inversion channel mobility is a key parameter of normally off Silicon-Carbide MOS field effect power transistors. The mobility is limited by scattering centers at the interface between the semiconductor and the gate-oxide. In this work we investigate the mobility of lateral normally-off MOSFETs with different p-doping concentrations in the channel. Additionally the effect of a shallow counter n-doping at the interface on the mobility was determined and, finally, the properties of interface traps with the charge pumping method were examined. A lower p-doping in the cannel reduces the threshold voltage and increases the mobility simultaneously. A shallow counter n-doping shows a similar effect, but differences in the behavior of the charge pumping current can be observed, indicating that the nitrogen has a significant effect on the electrical properties of the interface, too. © (2014) Trans Tech Publications, Switzerland.
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Germany (DE)How to cite
APA:
Noll, S., Rambach, M., Grieb, M., Scholten, D., Bauer, A., & Frey, L. (2014). Effect of shallow n-doping on field effect mobility in p-doped channels of 4H-SiC MOS field effect transistors. Trans Tech Publications Ltd.
MLA:
Noll, Stefan, et al. Effect of shallow n-doping on field effect mobility in p-doped channels of 4H-SiC MOS field effect transistors. Trans Tech Publications Ltd, 2014.
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