Temperature and electrical field dependence of the ambipolar mobility in n-doped 4H-SiC
Hürner A, Bonse C, Clemmer G, Kallinger B, Heckel T, Erlbacher T, Mitlehner H, Häublein V, Bauer A, Frey L, Heckel T (2014)
Publication Status: Published
Publication Type: Authored book, Volume of book series
Publication year: 2014
Publisher: Trans Tech Publications Ltd
Pages Range: 487-490
Event location: Miyazaki
ISBN: 9783038350101
DOI: 10.4028/www.scientific.net/MSF.778-780.487
Abstract
In this study, we present results on electrical characterization of bipolar pn-diodes to investigate the temperature and electrical field dependent behavior of ambipolar mobility in n-doped 4H-SiC. Therefore, static current-voltage measurements to calculate the specific differential resistance and dynamical reverse recovery measurements to determine the mean carrier concentration were carried out for different temperatures and forward current densities. The specific differential resistance of the drift layer decreased from 10 mWcm at 80 Acm to 6.6 mWcm at 180 Acm, whereas the mean carrier concentration only increased from 4.10 cm to 8.10 cm, indicating a decreasing ambipolar mobility. The calculated reduction of the ambipolar mobility from 800 cmVs to 650 cmVs in dependence on the current density has to be attributed to an increasing electric field from 150 Vcm to 250 Vcm and increasing carrier scattering due to higher carrier concentrations. For example, at a constant conduction current density of 160 Acm, the ambipolar mobility decreases from 710 cmVs at 300 K to 650 cmVs at 450 K. © (2014) Trans Tech Publications, Switzerland.
Authors with CRIS profile
Lothar Frey
Lehrstuhl für Elektronische Bauelemente
Thomas Heckel
Lehrstuhl für Elektronische Bauelemente
Related research project(s)
SiC-BIFET: Untersuchungen zu bipolaren SiC-Feldeffekttransistoren für das Mittelspannungsnetz
Sept. 1, 2010 - July 10, 2017
Leistungszentrum Elektroniksysteme (LZE), Teilprojekt 2: "Robuste Gestaltung induktiver Energieüberträger für bewegte Anwendungen"
Jan. 1, 2015 - June 30, 2017
Involved external institutions
Germany (DE)How to cite
APA:
Hürner, A., Bonse, C., Clemmer, G., Kallinger, B., Heckel, T., Erlbacher, T.,... Heckel, T. (2014). Temperature and electrical field dependence of the ambipolar mobility in n-doped 4H-SiC. Trans Tech Publications Ltd.
MLA:
Hürner, Andreas, et al. Temperature and electrical field dependence of the ambipolar mobility in n-doped 4H-SiC. Trans Tech Publications Ltd, 2014.
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