Characterization and Application of 600 V Normally-Off GaN Transistors in Hard Switching DC/DC Converters

Heckel T, Frey L, Zeltner S (2014)

Publication Status: Published

Publication Type: Conference contribution, Conference Contribution

Publication year: 2014

Publisher: Institute of Electrical and Electronics Engineers Inc.

Pages Range: 63-66

Article Number: 6855976

Event location: Waikoloa, HI

ISBN: 9781479929177

DOI: 10.1109/ISPSD.2014.6855976

Abstract

As GaN power devices emerge from research to industry, the characterization of these novel devices itself and its application in power electronic converters is essential. The purpose of this paper is to prove the capabilities of GaN technology using a novel 600 V normally-off GaN-on-Si transistor which shows no dynamic behavior of its on-resistance. A hard switching DC/DC converter prototype reveals efficiencies up to 99.3 % and switching frequencies up to 1 MHz incorporating a high power density up to 28 kW/l. © 2014 IEEE.

Authors with CRIS profile

Thomas Heckel Lehrstuhl für Elektronische Bauelemente Lothar Frey Lehrstuhl für Elektronische Bauelemente

Related research project(s)

Untersuchungen zur Leistungsdichte und Effizienz eines isolierenden DC/DC-Wandlers in GaN-Technologie (PowerGaNplus) Leistungswandler in GaN-Technologie zur Erschließung ungenutzter Energiepotentiale (PowerGaNplus) June 1, 2010 - May 31, 2013

Involved external institutions

Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie (IISB) DE Germany (DE)

How to cite

APA:

Heckel, T., Frey, L., & Zeltner, S. (2014). Characterization and Application of 600 V Normally-Off GaN Transistors in Hard Switching DC/DC Converters. In Proceedings of the 26th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2014 (pp. 63-66). Waikoloa, HI: Institute of Electrical and Electronics Engineers Inc..

MLA:

Heckel, Thomas, Lothar Frey, and Stefan Zeltner. "Characterization and Application of 600 V Normally-Off GaN Transistors in Hard Switching DC/DC Converters." Proceedings of the 26th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2014, Waikoloa, HI Institute of Electrical and Electronics Engineers Inc., 2014. 63-66.

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