Hock R (2005)
Publication Status: Published
Publication Type: Conference contribution
Publication year: 2005
Book Volume: 108-109
Pages Range: 631-636
The build-up of strain fields caused by the precipitation of oxygen in Czochralski-silicon during annealing up to 1200 degrees C and for process times up to 70 hours has been observed in real time by high energy x-ray diffraction. Five different processes are distinguished in the temperature evolution of the intensity and of the rocking width of the silicon 220-reflection. These features are attributed to different precipitation mechanisms. A fit to part of the data with a diffusion limited precipitation model leads to an activation energy for oxygen diffusion in silicon of 2.2 eV in the temperature range from 700 degrees C to 950 degrees C.
APA:
Hock, R. (2005). The build-up of strain fields in Czochralski-Si observed in real time by high energy x-ray diffraction. (pp. 631-636).
MLA:
Hock, Rainer. "The build-up of strain fields in Czochralski-Si observed in real time by high energy x-ray diffraction." 2005. 631-636.
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