Quantum oscillations and quantum Hall effect in epitaxial graphene

Jobst J, Waldmann D, Speck F, Hirner R, Maude D, Seyller T, Weber HB (2010)

Publication Status: Published

Publication Type: Journal article, Letter

Publication year: 2010

Journal

Physical Review B American Physical Society

Publisher: American Physical Society

Book Volume: 81

Journal Issue: 19

DOI: 10.1103/PhysRevB.81.195434

Abstract

We investigate the transport properties of high-quality single-layer graphene, epitaxially grown on a 6H-SiC(0001) substrate. We have measured transport properties, in particular charge-carrier density, mobility, conductivity, and magnetoconductance of large samples as well as submicrometer-sized Hall bars which are entirely lying on atomically flat substrate terraces. The results display high mobilities, independent of sample size. The temperature dependence of the conductance indicates a rather strong coupling to the SiC substrate. An analysis of the Shubnikov-de Haas effect yields the Landau-level spectrum of single-layer graphene. When gated close to the Dirac point, the mobility increases substantially and the graphenelike quantum Hall effect occurs.

Authors with CRIS profile

Johannes Jobst Chair of Applied Physics Daniel Waldmann Chair of Applied Physics Florian Speck Naturwissenschaftliche Fakultät Thomas Seyller Naturwissenschaftliche Fakultät Heiko Weber Chair of Applied Physics

Additional Organisation(s)

Exzellenz-Cluster Engineering of Advanced Materials

Related research project(s)

None - None

How to cite

APA:

Jobst, J., Waldmann, D., Speck, F., Hirner, R., Maude, D., Seyller, T., & Weber, H.B. (2010). Quantum oscillations and quantum Hall effect in epitaxial graphene. Physical Review B, 81(19). https://doi.org/10.1103/PhysRevB.81.195434

MLA:

Jobst, Johannes, et al. "Quantum oscillations and quantum Hall effect in epitaxial graphene." Physical Review B 81.19 (2010).

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