Quantum oscillations and quantum Hall effect in epitaxial graphene

Jobst J, Waldmann D, Speck F, Hirner R, Maude D, Seyller T, Weber HB (2010)

Publication Status: Published

Publication Type: Journal article, Letter

Publication year: 2010


Publisher: American Physical Society

Book Volume: 81

Journal Issue: 19

DOI: 10.1103/PhysRevB.81.195434


We investigate the transport properties of high-quality single-layer graphene, epitaxially grown on a 6H-SiC(0001) substrate. We have measured transport properties, in particular charge-carrier density, mobility, conductivity, and magnetoconductance of large samples as well as submicrometer-sized Hall bars which are entirely lying on atomically flat substrate terraces. The results display high mobilities, independent of sample size. The temperature dependence of the conductance indicates a rather strong coupling to the SiC substrate. An analysis of the Shubnikov-de Haas effect yields the Landau-level spectrum of single-layer graphene. When gated close to the Dirac point, the mobility increases substantially and the graphenelike quantum Hall effect occurs.

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Jobst, J., Waldmann, D., Speck, F., Hirner, R., Maude, D., Seyller, T., & Weber, H.B. (2010). Quantum oscillations and quantum Hall effect in epitaxial graphene. Physical Review B, 81(19). https://dx.doi.org/10.1103/PhysRevB.81.195434


Jobst, Johannes, et al. "Quantum oscillations and quantum Hall effect in epitaxial graphene." Physical Review B 81.19 (2010).

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