Freestanding 3C-SiC grown by sublimation epitaxy using 3C-SiC templates on silicon

Hens P, Müller J, Wagner G, Liljedahl R, Yakimova R, Spiecker E, Wellmann P, Syväjärvi M (2012)

Publication Language: English

Publication Status: Published

Publication Type: Journal article, Original article

Publication year: 2012

Journal

Materials Science Forum Trans Tech Publications

Book Volume: 717-720

Pages Range: 177-180

DOI: 10.4028/www.scientific.net/MSF.717-720.177

Abstract

In this work a new approach for the production of freestanding cubic silicon carbide (3C-SiC) in (001) orientation is presented which is based on the combination of chemical vapor deposition (CVD) and the fast sublimation growth process (FSGP). Fast homoepitaxial growth of 3C-SiC using sublimation epitaxy on a template created by CVD growth on silicon substrates allows to obtain thick freestanding material with low defect densities. Using standard silicon wafers as substrate material permits a cost efficient process and the applying of wafers with different orientations. The (001) orientation used in this work will potentially allow further heteroepitaxial growth of other cubic semiconductors, like e.g. gallium nitride (GaN). © (2012) Trans Tech Publications.

Authors with CRIS profile

Julian Müller Lehrstuhl für Werkstoffwissenschaften (Mikro- und Nanostrukturforschung) Erdmann Spiecker Lehrstuhl für Werkstoffwissenschaften (Mikro- und Nanostrukturforschung) Peter Wellmann Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)

Additional Organisation(s)

Lehrstuhl für Werkstoffwissenschaften (Mikro- und Nanostrukturforschung) Interdisziplinäres Zentrum, Center for Nanoanalysis and Electron Microscopy (CENEM)

Involved external institutions

Linköpings universitet / Linköping University SE Sweden (SE)

How to cite

APA:

Hens, P., Müller, J., Wagner, G., Liljedahl, R., Yakimova, R., Spiecker, E.,... Syväjärvi, M. (2012). Freestanding 3C-SiC grown by sublimation epitaxy using 3C-SiC templates on silicon. Materials Science Forum, 717-720, 177-180. https://doi.org/10.4028/www.scientific.net/MSF.717-720.177

MLA:

Hens, Philip, et al. "Freestanding 3C-SiC grown by sublimation epitaxy using 3C-SiC templates on silicon." Materials Science Forum 717-720 (2012): 177-180.

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