Optical properties of vertical, tilted and in-plane GaN nanowires on different crystallographic orientations of sapphire

Tessarek C, Figge S, Gust A, Heilmann M, Dieker C, Spiecker E, Christiansen S (2014)

Publication Status: Published

Publication Type: Journal article

Publication year: 2014

Journal

Journal of Physics D-Applied Physics Institute of Physics: Hybrid Open Access

Publisher: Institute of Physics: Hybrid Open Access

Book Volume: 47

Journal Issue: 39

DOI: 10.1088/0022-3727/47/39/394008

Abstract

Self-catalysed and self-organized GaN nanowires were grown on c-, a-, m- and r-plane sapphire by metal-organic vapour phase epitaxy. In dependence on the crystallographic orientation of the sapphire substrate, vertical, tilted and in-plane GaN nanowires were achieved. The nanowire orientation is visualized by scanning electron microscopy and analysed by x-ray diffraction. The influence of the sapphire nitridation step on the nanowire formation is investigated. Spatially and spectrally resolved cathodoluminescence studies are carried out on the GaN nanowires to analyse the influence of the GaN nanowire orientation as well as the presence of both N- and Ga-polar sections in a single nanowire on the optical properties.

Authors with CRIS profile

Christel Dieker Lehrstuhl für Werkstoffwissenschaften (Mikro- und Nanostrukturforschung) Erdmann Spiecker Lehrstuhl für Werkstoffwissenschaften (Mikro- und Nanostrukturforschung)

Additional Organisation(s)

Interdisziplinäres Zentrum, Center for Nanoanalysis and Electron Microscopy (CENEM) Exzellenz-Cluster Engineering of Advanced Materials

Involved external institutions

Max-Planck-Institut für die Physik des Lichts (MPL) / Max Planck Institute for the Science of Light DE Germany (DE) Universität Bremen DE Germany (DE)

How to cite

APA:

Tessarek, C., Figge, S., Gust, A., Heilmann, M., Dieker, C., Spiecker, E., & Christiansen, S. (2014). Optical properties of vertical, tilted and in-plane GaN nanowires on different crystallographic orientations of sapphire. Journal of Physics D-Applied Physics, 47(39). https://doi.org/10.1088/0022-3727/47/39/394008

MLA:

Tessarek, C., et al. "Optical properties of vertical, tilted and in-plane GaN nanowires on different crystallographic orientations of sapphire." Journal of Physics D-Applied Physics 47.39 (2014).

BibTeX: Download