Prof. Dr.-Ing. Jörg Schulze

Lehrstuhl für Elektronische Bauelemente

Electrical characterization of n-doped SiGeSn diodes with high Sn content (2018) Clausen CJ, Fischer IA, Weisshaupt D, Baerwolf F, Tillack B, Colston G, Myronov M, et al. Journal article Enhancement of Ge-based p-channel vertical FET performance by channel engineering using planar doping and a Ge/Si x Ge1-x-ySn y heterostructure model for low power FET applications (2018) Elogail Y, Fischer IA, Wendav T, Schulze J Journal article Tunnel Injection into Group IV Semiconductors and its Application to Light-Emitting Devices (2018) Clausen CJ, Fischer IA, Hoppe N, Koerner R, Oehme M, Schwarz D, Schulze J Conference contribution Formation of Mn5Ge3 by thermal annealing of evaporated Mn on doped Ge on Si(111) (2018) Bechler S, Kern M, Funk HS, Colston G, Fischer IA, Weisshaupt D, Myronov M, et al. Journal article Transient phenomena in sub-bandgap impact ionization in Si n-i-p-i-n Diode (2018) Das B, Schulze J, Ganguly U Journal article Characterization of thin Boron layers grown on Silicon utilizing molecular beam epitaxy for ultra-shallow pn-junctions (2018) Elsayed A, Schulze J Conference contribution Engineering of Germanium Tunnel Junctions for Optical Applications (2018) Koerner R, Fischer IA, Schwarz D, Clausen CJ, Hoppe N, Schulze J Journal article The effect of Ge precursor on the heteroepitaxy of Ge1-xSnx epilayers on a Si (001) substrate (2018) Jahandar P, Weisshaupt D, Colston G, Allred P, Schulze J, Myronov M Journal article Optical critical points of Si x Ge1-x-ySn y alloys with high Si content (2017) Fischer IA, Berrier A, Hornung F, Oehme M, Zaumseil P, Capellini G, Den Driesch NV, et al. Journal article (Si)GeSn plasmonics (2017) Fischer IA, Augel L, Berrier A, Oehme M, Schulze J Conference contribution