Andre Engelmann

Lehrstuhl für Intelligente Technische Elektronik und Systeme Lehrstuhl für Technische Elektronik (LTE) Technische Fakultät

A Low-Power TSPC-PRBS Generator in 12 nm FinFET Bulk CMOS (2026) Scheller K, Vilyuk K, Hetterle P, Weninger J, Engelmann A, Weigel R, Schrotz AM, Franchi N Conference contribution, Conference Contribution AI-Based Transformer Matching Network Synthesis Using a Data-Efficient Two-Step Method (2026) Simone G, Tas D, Schneider F, Schilling R, Engelmann A, Maiwald T, Breun S, et al. Conference contribution, Conference Contribution A 36 Gbit/s 15.6 fJ/Bit FoM TSPC 2:1 Multiplexer for High-Speed Serial Links in 22 nm FDSOI (2026) Weninger J, Probst F, Engelmann A, Spielberger A, Schrotz AM, Weigel R, Franchi N Conference contribution, Conference Contribution A TSPC mm-Wave Frequency Divider with up to 50 GHz Input Frequency in 12 nm FinFET Bulk CMOS (2025) Vilyuk K, Scheller K, Hetterle P, Probst F, Engelmann A, Schrotz AM, Franchi N, Weigel R Conference contribution, Conference Contribution A D-Band 6.8 GHz Lock Range 5th Sub-Harmonic Injection-Locked Oscillator in 22 nm FDSOI (2025) Engelmann A, Probst F, Hetterle P, Scheller K, Schrotz AM, Weigel R Conference contribution A Novel Integrated Power Detection Circuit for Low Noise Amplifiers in Cellular Applications (2025) Spielberger A, Scheller K, Engelmann A, Franchi N, Weigel R, Pfannenmüller C Conference contribution, Conference Contribution A 21 GHz Bandwidth 30 dB Gain VGA for 6G Basband Systems in 22 nm FDSOI (2025) Hetterle P, Engelmann A, Scheller K, Huang T, Weigel R, Franchi N Conference contribution, Conference Contribution A Broadband Sub-THz Push-Push Frequency Doubler in 22 nm FDSOI (2025) Scheller K, Engelmann A, Hetterle P, Weigel R, Schrotz AM, Fischer G Conference contribution, Conference Contribution A DC to 17 GHz Area-Efficient VGA with 20 DB Linear DB Tuning Range in 22 nm FDSOI (2025) Scheller K, Engelmann A, Hetterle P, Löffler J, Weigel R, Schrotz AM, Franchi N Conference contribution, Conference Contribution A 200 GHz Area-Efficient 4-stage Power Amplifier with Stacked Output Stage in 22 nm FDSOI (2024) Scheller K, Engelmann A, Probst F, Flohr M, Weigel R, Schrotz AM, Fischer G Conference contribution, Conference Contribution