Manuel Koch

Lehrstuhl für Intelligente Technische Elektronik und Systeme Lehrstuhl für Technische Elektronik (LTE) Technische Fakultät

Validation of an Open-Source RFIC Design Flow Using a 130 GHz Low-Noise Amplifier (2026) Simone G, Grund M, Koch M, Breun S, Weigel R, Franchi N Conference contribution, Conference Contribution Sub-THz Circuit and System Architectures for Communication and Sensing in 6G and Beyond (2025) Koch M, Schönecker A, Kohl C, Breun S, Weigel R, Franchi N Conference contribution A 304 to 337 GHz Push-Push Frequency Doubler with 6.8 dBm Pmax using T-Junction Combining in 90 nm SiGe BiCMOS Technology (2025) Breun S, Schrotz AM, Koch M, Franchi N, Weigel R Conference contribution, Conference Contribution A 148-166 GHz Meissner Push-Push VCO With -168 dBc/Hz FOMT Using a Single Transformer in SiGe BiCMOS Technology (2025) Breun S, Schrotz AM, Koch M, Fischer G, Weigel R Conference contribution Integrated Time Domain Multiplexer for Superconducting Qubit Control at Millikelvin Temperatures (2025) Schöpplein V, Breun S, Löffler J, Koch M, Loose M, Dietz M, Carlowitz C, et al. Conference contribution, Conference Contribution Timed array architectures and integrated true-time delay elements for wideband millimeter-wave antenna arrays (2024) Koch M, Schönhärl S, Breun S, Fischer G, Weigel R Journal article, Review article High-Frequency Multiport Vector Network Analysis Methodology Using Port Extension Across Multiple VNAs (2024) Löffler J, Koch M, Breun S, Weigel R Conference contribution A Broadband 22 nm FDSOI D-Band Power Amplifier with Dynamic Back Gate Bias Gain-Linearization Achieving 9.6% PAE at 8.7 dBm OPldB and 3.7% at 6 dB Back-off (2024) Engelmann A, Scheller K, Probst F, Koch M, Weigel R, Fischer G Conference contribution, Conference Contribution A 296-336 GHz 2 dBm Pmax Frequency Octupler Using Bootstrapped and Push-Push Topology in 90 nm SiGe BiCMOS Technology (2024) Breun S, Schrotz AM, Koch M, Fischer G, Weigel R Conference contribution, Conference Contribution A 290-359 GHz Push-Push Signal Source with 1.7 dBm Pmax using Variable Inductance in SiGe BiCMOS Technology (2024) Breun S, Schrotz AM, Koch M, Issakov V, Weigel R Conference contribution