Elisabeth Kodolitsch

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Chair of Applied Physics
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Structural investigation of triangular defects in 4H-SiC epitaxial layers as nucleation source for bar shaped stacking faults (BSSFs) (2023) Kodolitsch E, Kabakow A, Sodan , Krieger M, Weber HB, Tsavdaris N Journal article Structural investigation of triangular defects in 4H-SiC epitaxial layers as nucleation source for bar shaped stacking faults (BSSFs) (2023) Kodolitsch E, Kabakow A, Sodan V, Krieger M, Weber HB, Tsavdaris N Journal article Impact of crystalline defects in 4H-SiC epitaxial layers on the electrical characteristics and blocking capability of SiC power devices (2022) Kodolitsch E, Sodan V, Krieger M, Weber HB, Tsavdaris N Journal article, Letter Impact of Epitaxial Defects on Device Behavior and their Correlation to the Reverse Characteristics of SiC Devices (2022) Kodolitsch E, Sodan V, Krieger M, Tsavdaris N Journal article