Alexander Gröschel

Lehrstuhl für Kristallographie und Strukturphysik (ICSP)

Strain relief via silicon self-interstitial emission in highly boron-doped silicon: A diffuse X-ray scattering study of oxygen precipitation (2015) Bergmann C, Gröschel A, Will J, Magerl A Journal article Radial oxygen precipitation of a 12 '' CZ silicon crystal studied in-situ with high energy X-ray diffraction (2014) Bergmann C, Will J, Gröschel A, Weißer M, Magerl A Journal article Growth and nucleation regimes in boron doped silicon by dynamical x-ray diffraction (2014) Will J, Gröschel A, Bergmann C, Weißer M, Magerl A Journal article Misfit strain of oxygen precipitates in Czochralski silicon studied with energy-dispersive X-ray diffraction (2014) Gröschel A, Will J, Bergmann C, Magerl A Journal article Diffusion-driven precipitate growth and ripening of oxygen precipitates in boron doped silicon by dynamical x-ray diffraction (2014) Will J, Gröschel A, Bergmann C, Spiecker E, Magerl A Journal article Oxygen diffusivity in silicon derived from dynamical X-ray diffraction (2013) Will J, Gröschel A, Kot D, Bergmann C, Steinrück HG, Schubert MA, Kissinger G, Magerl A Journal article, Original article In-situ measurement of thickness-dependent Pendellosung oscillations from a precipitation process in silicon at 650 degrees C (2012) Will J, Gröschel A, Bergmann C, Magerl A Conference contribution, Conference Contribution Thickness dependence of the integrated Bragg intensity for statistically disturbed silicon crystals (2011) Will J, Gröschel A, Weißer M, Magerl A Journal article Structural Defect Studies of Semiconductor Crystals with Laue Topography (2011) Gröschel A, Will J, Bergmann C, Grillenberger H, Eichler S, Scheffer-Czygan M, Magerl A Conference contribution, Conference Contribution In-Situ observation of the oxygen nucleation in silicon with X-Ray single crystal diffraction (2011) Will J, Gröschel A, Bergmann C, Magerl A Conference contribution