In-situ measurement of thickness-dependent Pendellosung oscillations from a precipitation process in silicon at 650 degrees C

Will J, Gröschel A, Bergmann C, Magerl A (2012)

Publication Status: Published

Publication Type: Conference contribution, Conference Contribution

Publication year: 2012

Journal

Physica Status Solidi (C) Current Topics in Solid State Physics Wiley - V C H Verlag GmbbH & Co.

Book Volume: 9

Pages Range: 1920-1923

Journal Issue: 10-11

DOI: 10.1002/pssc.201200064

Abstract

The time dependent agglomeration of oxygen in silicon at an annealing temperature of 650 degrees C is followed in-situ via the variation of the thickness-dependent Pendellosung fringes. The measurement of the 400-reflection of a wedge shaped sample with the characteristic tungsten K-alpha 1-line at 59.31 keV allows to observe changes of the static Debye-Waller factor of about 0.001%. Within the model of spherical precipitates and the classical theory of diffusion-driven precipitation we determine from this a diffusion constant 4.7x10(-15) cm(2)/s for oxygen in silicon at 650 degrees C which appears enhanced by a factor of 2.4 as compared to normal oxygen diffusion. (C) 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

Authors with CRIS profile

Johannes Will Lehrstuhl für Kristallographie und Strukturphysik Alexander Gröschel Lehrstuhl für Kristallographie und Strukturphysik Christoph Bergmann Lehrstuhl für Kristallographie und Strukturphysik Andreas Magerl Lehrstuhl für Kristallographie und Strukturphysik

How to cite

APA:

Will, J., Gröschel, A., Bergmann, C., & Magerl, A. (2012). In-situ measurement of thickness-dependent Pendellosung oscillations from a precipitation process in silicon at 650 degrees C. (pp. 1920-1923).

MLA:

Will, Johannes, et al. "In-situ measurement of thickness-dependent Pendellosung oscillations from a precipitation process in silicon at 650 degrees C." 2012. 1920-1923.

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