Carsten Hellinger

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Lehrstuhl für Elektronische Bauelemente
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Journal

Plasma Treatment after NiSi-Based Ohmic Contact Formation on 4H-SiC to Enhance Adhesion of Subsequent Backside Metallization (2024) Becker T, Hellinger C, Fuchs A, Körfer J, Rusch O Journal article Low-resistance ohmic contact formation by laser annealing of N-implanted 4H-SiC (2020) Hellinger C, Rusch O, Rommel M, Bauer AJ, Erlbacher T Conference contribution Reducing on-resistance for SiC diodes by thin wafer and laser anneal technology (2020) Rusch O, Hellinger C, Moult J, Corcoran Y, Erlbacher T Conference contribution