Dr.-Ing. Saskia Schimmel

Lehrstuhl für Elektronische Bauelemente

Numerical Simulation of the Ammonothermal Growth Process of GaN - Effect of Thermal Boundary Conditions on Flow Field and Temperature Distribution Center for Integrated Research of Future Electronics GaN Webinar Series Poland-Japan (Unipress - Nagoya University) Seminar on GaN 20.11.2020 In Situ X-Ray Monitoring of Ammonothermal Reaction Processes for Advancing the Understanding of Ammonothermal GaN Growth 16th Akasaki Research Center Symposium "To the New Horizon of the Nitride Research" 29.11.2019 Insights into Ammonothermal Autoclaves by X-Ray-based In Situ Measurement Techniques Annual meeting of ProcessNet group for high pressure process technology 20.02.2018 Insights into Ammonothermal Growth of Nitrides by In Situ Measurement Techniques DGKK Workshop on bulk semiconductor crystals 12.10.2017 Insights into the Ammonothermal Growth Process of GaN by In Situ X-Ray Visualization International Workshop on Bulk Nitride Semiconductors 21.09.2017 Towards Improved Understanding of Ammonothermal Crystal Growth - Insights by In Situ X-ray Imaging of GaN Dissolution DGKK Workshop on bulk semiconductor crystals 13.10.2016 GaN Solubility and Dissolution Kinetics Investigated Using Direct Insight into Ammonothermal Autoclaves by In Situ X-Ray Imaging International Workshop on Nitride Semiconductors 05.10.2016 Solubility and Dissolution Kinetics of GaN under Ammonobasic Conditions using NaN3 Mineralizer 1st German Czechoslovak Conference on Crystal Growth 17.03.2016 In Situ X-Ray Imaging of GaN under Ammonothermal Conditions - Application for GaN Solubility Measurements German Conference on Crystal Growth (DKT 2015) 06.03.2015 Towards X-Ray In-Situ Visualization of Ammonothermal Crystal Growth of Nitrides via Hydrothermal Crystallization of Zeolites European Materials Research Society Fall Meeting 20.09.2013