Institut Lavoisier de Versailles (ILV)
    Research facility
    
    
        Location: 
        Versailles,
        
                France (FR)
                
    
 
        
    
    
    
        ROR: https://ror.org/05mzd8v39
    
    
    
    
    
        
    
        
    
        
    
    
    
        
            
                
  
  Interface defect formation for atomic layer deposition of SnO2 on metal halide perovskites (2024)
  Mallik N, Hajhemati J, Frégnaux M, Coutancier D, Toby A, Zhang ST, Hartmann C, et al.
  Journal article
            
                
  
  Influence of X-Ray Irradiation During Photoemission Studies on Halide Perovskite-Based Devices (2023)
  Ralaiarisoa M, Frisch J, Frégnaux M, Cacovich S, Yaïche A, Rousset J, Gorgoi M, et al.
  Journal article