Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie (IISB)
Research facility
Location:
Erlangen,
Germany (DE)
ISNI: 0000000104810543
ROR: https://ror.org/04q5rka56
Analytical Modelling of the Quasi-Static Operation of a Monolithically Integrated 4H-SiC Circuit Breaker Device (2024)
Boettcher N, Rommel M, Erlbacher T
Journal article
Simulation-Guided Analysis towards Trench Depth Optimization for Enhanced Flexibility in Stretch-Free, Shape-Induced Interconnects for Flexible Electronics (2024)
Joch D, Lang T, Sanctis S, Jank M
Journal article
AI for Stability Optimization in Low Voltage Direct Current Microgrids (2024)
Roeder G, Schwanninger R, Wienzek P, Kerscher M, Wunder B, Schellenberger M
Book chapter / Article in edited volumes
Operating strategies for a Regional Airport to challenge future hybrid-electric aircraft systems (2024)
Meindl M, Krödel PO, Lange C, März M
Conference contribution, Original article
Velocity-Based Channel Charting with Spatial Distribution Map Matching (2024)
Stahlke M, George Y, Feigl T, Eskofier B, Mutschler C
Journal article
Adhesion strength of ductile thin film determined by cross-sectional nanoindentation (2024)
Zhao D, Letz S, Jank M, März M
Journal article
Increasing 4H-SiC Trench Depth by Improving the Dry Etch Selectivity towards the Oxide Hard Mask (2024)
Rusch O, Brueckner K, Erlbacher T
Book chapter / Article in edited volumes
A 4H-SiC CMOS Technology enabling Smart Sensor Integration and Circuit Operation above 500 °C (2024)
May A, Rommel M, Baier L, Schraml M, Dick J, Jank M, Schulze J
Conference contribution
Imaging effects of particles on the surface of EUV mask and wafer (2024)
Semaan R, Bottiglieri G, Erdmann A, Rispens G, de Winter L, Beekmans S
Conference contribution
Epitaxy of >7 μm Thick GaN Drift Layers on 150 mm Si(111) Substrates Realizing Vertical PN Diodes with 1200 V Breakdown Voltage (2024)
Michler S, Hamdaoui Y, Thapa S, Schwalb G, Besendörfer S, Ziouche K, Albrecht M, et al.
Journal article