Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie (IISB)
Research facility
Location:
Erlangen,
Germany (DE)
ISNI: 0000000104810543
ROR: https://ror.org/04q5rka56
System integration in automotive power systems (2005)
Gerber M, März M
Conference contribution
Wafer scale characterization of interface state densities without test structures by photocurrent analysis (2005)
Rommel M, Groß M, Frey L, Bauer A, Ryssel H
Conference contribution, Conference Contribution
Triple trench gate IGBTs (2005)
Berberich SE, Bauer A, Frey L, Ryssel H
Conference contribution, Conference Contribution
Thin HfxTiySixO films with varying Hf to Ti contents as candidates for high-k dielectrics (2005)
Bauer A, Paskaleva A, Lemberger M, Frey L, Ryssel H
Conference contribution, Conference Contribution
High-k Hafnium Silicate Films on Silicon and Germanium Wafers by MOCVD Using a Single-Source Precursor (2005)
Lemberger M, Schön F, Dirnecker T, Jank M, Paskaleva A, Bauer A, Frey L, Ryssel H
Book chapter / Article in edited volumes
Ion Sputtering at Grazing Incidence for SIMS-Analysis (2005)
Ryssel H, Ullrich M, Burenkov A
Journal article
Implantation and Annealing of Aluminum in 4H Silicon Carbide (2005)
Rambach M, Schmid F, Krieger M, Frey L, Bauer A, Pensl G, Ryssel H
Journal article
Investigations into the wear of a WL10 ion source (2005)
Haeublein V, Sadrawetz S, Frey L, Martinz HP, Ryssel H
Journal article, Original article
Electrical properties of hafnium silicate films obtained from a single-source MOCVD precursor (2005)
Lemberger M, Paskaleva A, Zürcher S, Bauer A, Frey L, Ryssel H
Journal article, Original article
Chemical vapor phase precipitation of new materials for sub 50 nm transistors Chemische Dampfphasenabscheidung von neuen Materialien für Sub-50-nm-Transistoren (2005)
Frey L, Bauer A, Ryssel H
Journal article, Original article