Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie (IISB)
Research facility
Location:
Erlangen,
Germany (DE)
ISNI: 0000000104810543
ROR: https://ror.org/04q5rka56
Creation of E-Learning Content for Microelectronics Manufacturing (2006)
Oechsner R, Pfeffer M, Pfitzner L, Ryssel H, Beer K, Boldin M, de Mey B, et al.
Conference contribution
System integration in automotive power systems (2005)
Gerber M, März M
Conference contribution
Wafer scale characterization of interface state densities without test structures by photocurrent analysis (2005)
Rommel M, Groß M, Frey L, Bauer A, Ryssel H
Conference contribution, Conference Contribution
Triple trench gate IGBTs (2005)
Berberich SE, Bauer A, Frey L, Ryssel H
Conference contribution, Conference Contribution
Thin HfxTiySixO films with varying Hf to Ti contents as candidates for high-k dielectrics (2005)
Bauer A, Paskaleva A, Lemberger M, Frey L, Ryssel H
Conference contribution, Conference Contribution
High-k Hafnium Silicate Films on Silicon and Germanium Wafers by MOCVD Using a Single-Source Precursor (2005)
Lemberger M, Schön F, Dirnecker T, Jank M, Paskaleva A, Bauer A, Frey L, Ryssel H
Book chapter / Article in edited volumes
Ion Sputtering at Grazing Incidence for SIMS-Analysis (2005)
Ryssel H, Ullrich M, Burenkov A
Journal article
Implantation and Annealing of Aluminum in 4H Silicon Carbide (2005)
Rambach M, Schmid F, Krieger M, Frey L, Bauer A, Pensl G, Ryssel H
Journal article
Investigations into the wear of a WL10 ion source (2005)
Haeublein V, Sadrawetz S, Frey L, Martinz HP, Ryssel H
Journal article, Original article
Electrical properties of hafnium silicate films obtained from a single-source MOCVD precursor (2005)
Lemberger M, Paskaleva A, Zürcher S, Bauer A, Frey L, Ryssel H
Journal article, Original article