Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie (IISB)

Research facility


Location: Erlangen, Germany (DE) DE

ISNI: 0000000104810543

ROR: https://ror.org/04q5rka56

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Types of publications

Journal article
Book chapter / Article in edited volumes
Authored book
Translation
Thesis
Edited Volume
Conference contribution
Other publication type
Unpublished / Preprint

Publication year

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To

Abstract

Journal

Heterogeneous Integration of Vertical GaN Power Transistor on Si Capacitor for DC-DC Converters (2018) Yu Z, Zeltner S, Boettcher N, Rattmann G, Leib J, Bayer C, Schletz A, et al. Conference contribution, Conference Contribution Anode recirculation and purge strategies for PEM fuel cell operation with diluted hydrogen feed gas (2018) Steinberger M, Geiling J, Oechsner R, Frey L Journal article, Original article Large-Area Layer Counting of 2D Materials via Visible Reflection Spectroscopy (2018) Hutzler A, Matthus C, Rommel M, Jank M, Frey L Conference contribution, Conference Contribution Aggregated neutrophil extracellular traps resolve inflammation by proteolysis of cytokines and chemokines and protection from antiproteases (2018) Hahn J, Schauer C, Czegley C, Kling L, Petru L, Schmid B, Weidner D, et al. Journal article, Original article Advanced Vehicle Charging Solutions using SiC and GaN Power Devices (2018) Eckardt B, Wild M, Joffe C, Zeltner S, Endres S, März M Conference contribution, Conference Contribution Is an antiparallel SiC-Schottky diode necessary? Calorimetric analysis of SiC-MOSFETs switching behavior (2018) Kreutzer O, Billmann M, März M Conference contribution, Conference Contribution Power Antifuse Device to Bypass or Turn-off Battery Cells in Safety-Critical and Fail-Operational Systems (2018) Lorentz V, Waller R, Waldhör S, Wenger M, Gepp M, Schwarz R, Koffel S, et al. Conference contribution, Conference Contribution Influence and mutual interaction of process parameters on the Z1/2defect concentration during epitaxy of 4H-SiC (2018) Erlekampf J, Kaminzky D, Rosshirt K, Kallinger B, Rommel M, Berwian P, Friedrich J, Frey L Conference contribution Electrical properties of schottky-diodes based on B doped diamond (2018) Erlbacher T, Huerner A, Zhu Y, Bach L, Schletz A, Zuerbig V, Pinti L, et al. Conference contribution Analytical model for the influence of the gate-voltage on the forward conduction properties of the body-diode in SiC-MOSFETs (2018) Huerner A, Heckel T, Endruschat A, Erlbacher T, Bauer AJ, Frey L Conference contribution
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