Paul-Drude-Institut für Festkörperelektronik - Leibniz-Institut im Forschungsverbund Berlin e.V.

Research facility

Location: Berlin, Germany (DE)

ISNI: 0000000091192714

ROR: https://ror.org/01mk1hj86

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Publications

(22)

Interface structure and strain state of InAs nano-clusters embedded in silicon (2015) Wu M, Trampert A, Al-Zoubi T, Benyoucef M, Reithmaier JP Journal article Spontaneous formation of nanostructures by surface spinodal decomposition in GaAs1-xBix epilayers (2015) Luna E, Wu M, Puustinen J, Guina M, Trampert A Journal article, Original article Plan-view transmission electron microscopy investigation of GaAs/(In,Ga)As core-shell nanowires (2014) Grandal J, Wu M, Kong X, Hanke M, Dimakis E, Geelhaar L, Riechert H, Trampert A Journal article Atomistic structure and energetics of GdN clusters in Gd-doped GaN (2014) Wu M, Erwin SC, Trampert A Journal article Observation of atomic ordering of triple-period-A and -B type in GaAsBi (2014) Wu M, Luna E, Puustinen J, Guina M, Trampert A Journal article Formation and phase transformation of Bicontaining QD-like clusters in annealed GaAsBi (2014) Wu M, Luna E, Puustinen J, Guina M, Trampert A Journal article Nanostructured hybrid material based on highly mismatched III-V nanocrystals fully embedded in silicon (2014) Benyoucef M, Al-Zoubi T, Reithmaier JP, Wu M, Trampert A Journal article, Original article Nanoscale Imaging of InN Segregation and Polymorphism in Single Vertically Aligned InGaN/GaN Multi Quantum Well Nanorods by Tip-Enhanced Raman Scattering (2013) Poliani E, Wagner MR, Reparaz JS, Mand M, Strassburg M, Kong X, Trampert A, et al. Journal article Coherent GdN clusters in epitaxial GaN:Gd thin films determined by transmission electron microscopy (2013) Wu M, Trampert A Journal article Variation of lattice constant and cluster formation in GaAsBi (2013) Puustinen J, Wu M, Luna E, Schramm A, Laukkanen P, Laitinen M, Sajavaara T, Guina M Journal article, Original article

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