Sicrystal AG

Industry / private company


Location: Nürnberg, Germany (DE) DE

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Types of publications

Journal article
Book chapter / Article in edited volumes
Authored book
Translation
Thesis
Edited Volume
Conference contribution
Other publication type
Unpublished / Preprint

Publication year

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Abstract

Journal

Doping induced lattice misfit in 4H-SiC homoepitaxy (2012) Kallinger B, Berwian P, Friedrich J, Mueller G, Weber AD, Volz E, Trachta G, et al. Journal article Analysis on defect generation during the SiC bulk growth process (1999) Hofmann HD, Schmitt E, Bickermann M, Kölbl M, Wellmann P, Winnacker A Journal article, Original article