Universität Stuttgart

Influence of the modulation doping to the mobility of two-dimensional electron gases in Si/SiGe (2010) Werner J, Oehme M, Kasper E, Schulze J Journal article Germanium on silicon photodetectors with broad spectral range (2010) Oehme M, Kaschel M, Werner J, Kirfel O, Schmid M, Bahouchi B, Kasper E, Schulze J Journal article Crystalline Ge1-xSnx heterostructures in lateral high-speed devices (2010) Jeschke S, Pfeiffer O, Schulze J, Wilke M Conference contribution Very high room-temperature peak-to-valley current ratio in Si Esaki tunneling diodes (March 2010) (2010) Oehme M, Sarlija M, Haehnel D, Kaschel M, Werner J, Kasper E, Schulze J Journal article Franz-Keldysh effect in Germanium p-i-n photodetectors on Silicon (2010) Schmid M, Oehme M, Kaschel M, Werner J, Kasper E, Schulze J Conference contribution Si Esaki diodes with high peak to valley current ratios (2009) Oehme M, Haehnel D, Werner J, Kaschel M, Kirfel O, Kasper E, Schulze J Journal article Group-IV heteroepitaxial films for optoelectronic applications (2009) Oehme M, Werner J, Kasper E, Schulze J Conference contribution MBE growth of Ge quantum dot structures in oxide windows (2009) Karmous A, Kirfel O, Oehme M, Kasper E, Schulze J Conference contribution Ge on Si p-i-n photodiodes for a Bit rate of up to 25 Gbit/s (2009) Klinger S, Grözing M, Zaoui WS, Berroth M, Kaschel M, Oehme M, Kasper E, Schulze J Conference contribution Design of adaptive feedforward control under input constraints for a benchmark CSTR based on a BVP solver (2009) Hagenmeyer V, Zeitz M Journal article