Electrical spin injection and transport in germanium

Zhou Y, Han W, Chang LT, Xiu F, Wang M, Oehme M, Fischer IA, Schulze J, Kawakami RK, Wang KL (2011)

Publication Type: Journal article

Publication year: 2011

Journal

Physical Review B - Condensed Matter and Materials Physics American Physical Society (APS)

Book Volume: 84

Article Number: 125323

Journal Issue: 12

DOI: 10.1103/PhysRevB.84.125323

Abstract

We report the first experimental demonstration of electrical spin injection, transport, and detection in bulk germanium (Ge). The nonlocal magnetoresistance (MR) in n-type Ge is observable up to 225 K. Our results indicate that the spin relaxation rate in the n-type Ge is closely related to the momentum scattering rate, which is consistent with the predicted Elliot-Yafet spin relaxation mechanism for Ge. The bias dependence of the nonlocal MR and the spin lifetime in n-type Ge is also investigated. © 2011 American Physical Society.

Authors with CRIS profile

Jörg Schulze

Involved external institutions

Universität Stuttgart DE Germany (DE) University of California, Riverside (UCR) US United States (USA) (US) University of California Los Angeles (UCLA) US United States (USA) (US)

How to cite

APA:

Zhou, Y., Han, W., Chang, L.-T., Xiu, F., Wang, M., Oehme, M.,... Wang, K.L. (2011). Electrical spin injection and transport in germanium. Physical Review B - Condensed Matter and Materials Physics, 84(12). https://doi.org/10.1103/PhysRevB.84.125323

MLA:

Zhou, Yi, et al. "Electrical spin injection and transport in germanium." Physical Review B - Condensed Matter and Materials Physics 84.12 (2011).

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