Institute Materials for Electronics and Energy Technology (i-MEET)

Erratum to “Optimization of KOH etching parameters for quantitative defect recognition in n- and p-type doped SiC”: [J. Crystal Growth 289 (2006) 520–526] (2007) Sakwe A, Müller R, Wellmann P Journal article, Erratum Electronics Production: Research from Materials to Systems, Proceedings of the 2nd Chinese-German Summer School in Shanghai (2007) Wellmann P, Feng Z, Shi G Edited Volume Growth and characterization of C-13 enriched 4H-SiC for fundamental materials studies (2007) Jang YS, Sakwe A, Wellmann P, Juillaguet S, Peyre H, Camassel J, Steeds JW Journal article, Original article Defect etching of non-polar and semi-polar faces in SiC (2007) Sakwe A, Jang YS, Wellmann P Journal article, Original article Impact of n-type versus p-type doping on mechanical properties and dislocation evolution during SiC crystal growth (2007) Wellmann P, Hens P, Sakwe A, Queren D, Müller R, Durst K, Göken M Journal article, Original article Influence of growth temperature on the evolution of dislocations during PVT growth of bulk SiC single crystals (2007) Sakwe A, Wellmann P Journal article, Original article In-situ X-ray measurements of defect generation during PVT growth of SiC (2007) Konias K, Hock R, Stockmeier M, Wellmann P, Miller M, Ossege S, Magerl A Journal article, Original article Investigation of the beta'- to alpha-phase transformation temperature of (Ca1-xMgx)3(PO4)2 solid solutions (2007) Götz-Neunhoeffer F, Neubauer J, Enderle R, Göbbels M Journal article Angle dependence of external and internal quantum efficiencies in bulk-heterojunction organic solar cells (2007) Dennler G, Forberich K, Scharber M, Brabec C, Tomis I, Hingerl K, Fromherz T Journal article, Original article Alternating quinoxaline/oligothiophene copolymers - Synthesis and unexpected absorption properties (2007) Tsami A, Bünnagel TW, Farrell T, Scharber M, Chalois SA, Brabec C, Scherf U Journal article, Original article