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Lehrstuhl für Elektronische Bauelemente
Friedrich-Alexander-Universität Erlangen-Nürnberg
Technische Fakultät
Department Elektrotechnik-Elektronik-Informationstechnik (EEI)
Overview
Publications
(551)
Research Grants
(59)
Research Fields
(9)
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Journal article
Journal article
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Book chapter / Article in edited volumes
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Spectrally Stable Defect Qubits with no Inversion Symmetry for Robust Spin-To-Photon Interface (2019)
Udvarhelyi P, Nagy R, Kaiser F, Lee SY, Wrachtrup J, Gali A
Journal article
Large-Area Layer Counting of Two-Dimensional Materials Evaluating the Wavelength Shift in Visible-Reflectance Spectroscopy (2019)
Hutzler A, Matthus C, Dolle C, Rommel M, Jank MPM, Spiecker E, Frey L
Journal article
Parameter study on the electrical contact resistance of axially canted coil springs for high-current systems (2019)
Schriefer T, Hofmann M, Rauh H, Eckardt B, März M
Conference contribution, Conference Contribution
Improving 5V digital 4H-SIC CMOS ics for operating at 400°C using PMOS channel implantation (2019)
Albrecht M, Erlbacher T, Bauer A, Frey L
Journal article, Report
Towards highly integrated, automotive power SoCs using capacitors operating at 100 V implemented in TSV (2019)
Grünler S, Rattmann G, Erlbacher T, Bauer AJ, Krach F, Frey L
Conference contribution
Experimental investigation of the gravity influence on the condensation behaviour on Al and PTFE-samples (2019)
Fedorova N, Macher P, Jovicic V, Zbogar-Rasic A, Delgado A
Conference contribution
Silicon RC-Snubber for 900 V Applications Utilising non-Stoichiometric Silicon Nitride (2019)
Boettcher N, Heckel T, Erlbacher T, Pelaic K
Conference contribution
Performance of 4H-SIC bipolar diodes as temperature sensor at low temperatures (2019)
Di Benedetto L, Matthus C, Erlbacher T, Bauer AJ, Licciardo GD, Rubino A, Frey L
Conference contribution
Determination of compensation ratios of al-implanted 4H-SIC by tcad modelling of TLM measurements (2019)
Kocher M, Yao B, Weiße J, Rommel M, Xu ZW, Erlbacher T, Bauer A
Conference contribution
Comparison between NI-SALICIDE and self-aligned lift-off used in fabrication of ohmic contacts for sic power MOSFET (2019)
Śledziewski T, Erlbacher T, Bauer A, Frey L, Chen X, Zhao Y, Li C, Dai X
Conference contribution
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