Lehrstuhl für Elektronische Bauelemente

The impact of dislocations on AlGaN/GaN Schottky diodes and on gate failure of high electron mobility transistors (2020) Besendörfer S, Meißner E, Medjdoub F, Derluyn J, Friedrich J, Erlbacher T Journal article Combined experimental and numerical approach for investigating the mechanical degradation of the interface between thin film metallization and Si-substrate after temperature cycling test (2020) Zhao D, Letz S, Yu Z, Schletz A, März M Journal article, Original article Advancing the sensitivity of integrated epoxy-based Bragg grating refractometry by high-index nanolayers (2020) Hessler S, Knopf S, Rommel M, Girschikofsky M, Schmauß B, Hellmann R Journal article Design Considerations on a Monolithically Integrated, Self Controlled and Regenerative 900 V SiC Circuit Breaker (2020) Boettcher N, Erlbacher T Conference contribution Molecular dynamics modeling of the radial heat transfer from silicon nanowires (2020) Bejenari I, Burenkov A, Pichler P, Deretzis I, La Magna A Conference contribution Reliability of silver direct bonding in thermal cycling tests (2020) Yu Z, Zeng W, Zhao D, Zhang Z, Bayer CF, Schletz A, März M Conference contribution Fully convolutional networks for void segmentation in X-ray images of solder joints (2020) Wankerl H, Stern M, Altieri-Weimar P, Al-Baddai S, Lang KJ, Roider F, Lang EW Journal article Highly Accurate Determination of Heterogeneously Stacked Van-der-Waals Materials by Optical Microspectroscopy (2020) Hutzler A, Fritsch B, Matthus C, Jank MPM, Rommel M Journal article, Original article X-ray characterization of physical-vapor-transport-grown bulk AlN single crystals (2020) Wicht T, Mueller S, Weingaertner R, Epelbaum B, Besendoerfer S, Bläß U, Weißer M, et al. Journal article RESURF n-LDMOS Transistor for Advanced Integrated Circuits in 4H-SiC (2020) Weiße J, Matthus C, Schlichting H, Mitlehner H, Erlbacher T Journal article