Temperature analysis of the Gaussian distribution modeling the barrier height inhomogeneity in the Tungsten/4H-SiC Schottky diode
Toumi S, Ouennoughi Z, Weiß R (2021)
Publication Type: Journal article
Publication year: 2021
Journal
Book Volume: 127
Article Number: 661
Journal Issue: 9
DOI: 10.1007/s00339-021-04787-0
Abstract
The temperature dependence of the electrical properties of the Schottky barrier contact W/4H-SiC is studied in term of the Werner’s model assuming a Gaussian distribution of the barrier height to model the inhomogeneity of the Schottky interface. The Gaussian distribution is characterized by the parameters ϕ¯ B as a mean barrier height, ρ2, ρ3 as coefficients quantifying the barrier deformation and σs as a standard deviation. The effect of the series resistance Rs and its relation with the standard deviation σs is also reported. A vertical optimization process is used to extract simultaneously all the parameters cited above as function of temperature from the forward current–voltage (I-V) characteristics at temperatures ranging from 303 to 448 K. The temperature dependence of the characterized parameters of the W/4H-SiC Schottky structure enables us to quantify the inhomogeneity state of the Schottky barrier height prevailing at the MS interface in terms of those extracted parameters.
Involved external institutions
Algeria (DZ)How to cite
APA:
Toumi, S., Ouennoughi, Z., & Weiß, R. (2021). Temperature analysis of the Gaussian distribution modeling the barrier height inhomogeneity in the Tungsten/4H-SiC Schottky diode. Applied Physics A: Materials Science and Processing, 127(9). https://dx.doi.org/10.1007/s00339-021-04787-0
MLA:
Toumi, S., Z. Ouennoughi, and Roland Weiß. "Temperature analysis of the Gaussian distribution modeling the barrier height inhomogeneity in the Tungsten/4H-SiC Schottky diode." Applied Physics A: Materials Science and Processing 127.9 (2021).
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