Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)

Numerical simulation of thermal stress formation during PVT-growth of SiC bulk crystals (2001) Selder M, Kadinski L, Durst F, Straubinger T, Wellmann P, Hofmann HD Journal article, Original article Stability criteria for 4H-SiC bulk growth (2001) Straubinger T, Bickermann M, Hofmann HD, Weingärtner R, Wellmann P, Winnacker A Journal article, Original article Investigation of a PVT SiC-growth set-up modified by an additional gas flow (2001) Straubinger T, Wellmann P, Winnacker A Journal article, Original article In situ visualization and analysis of silicon carbide physical vapor transport growth using digital X-ray imaging (2000) Wellmann P, Bickermann M, Hofmann HD, Kadinski L, Selder M, Straubinger T, Winnacker A Journal article Growth rate control in SiC-physical vapor transport method through heat transfer modeling and non-stationary process conditions (2000) Straubinger T, Bickermann M, Grau M, Hofmann HD, Kadinski L, Müller G, Selder M, et al. Journal article, Original article Digital x-ray imaging of SiCPVT process: Analysis of crystal growth and powder source degradation (2000) Wellmann P, Bickermann M, Hofmann HD, Kadinski L, Selder M, Straubinger T, Winnacker A Journal article, Original article Silicon carbide as a semiconductor material for high temperature, high power and optoelectronics (2000) Winnacker A, Hofmann HD, Wellmann P Conference contribution, Conference Contribution Global numerical simulation of heat and mass transfer during SiC bulk crystal PVT growth (2000) Selder M, Kadinski L, Durst F, Straubinger T, Hofmann HD, Wellmann P Journal article, Original article Global numerical simulation of heat and mass transfer for SiC bulk crystal growth by PVT (2000) Selder M, Kadinski L, Makarov Y, Durst F, Wellmann P, Straubinger T, Hofmann HD, et al. Journal article, Original article Giant magnetoresistance effect in a new hybrid granular ferromagnet semiconductor system - MnAs nanomagnets imbedded in LT-GaAs (1999) Wellmann P, Garcia J, Feng JL, Petroff P Conference contribution