Department Werkstoffwissenschaften


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Types of publications

Journal article
Book chapter / Article in edited volumes
Authored book
Translation
Thesis
Edited Volume
Conference contribution
Other publication type
Unpublished / Preprint

Publication year

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To

Abstract

Journal

Silicon Carbide Growth: C/Si Ratio Evaluation and Modeling (2006) Pons M, Wellmann P, Nishizawa SI, Blanquet E, Dedulle J, Chaussende D Journal article, Original article Results of SIMS, LTPL and temperature-dependent Hall effect measurements performed on Al-doped alpha-SiC substrates grown by the M-PVT method (2006) Contreras S, Zielinski M, Konczewicz L, Blanc C, Juillaguet S, Müller R, Künecke U, et al. Journal article, Original article Gas-phase characterization in diamond hot-filament CVD by infrared tunable diode laser absorption spectroscopy (2006) Hirmke J, Hempel F, Stancu GD, Röpcke J, Rosiwal S, Singer R Journal article, Original article Deposition of uniform and well adhesive diamond layers on planar tungsten copper substrates for heat spreading applications (2006) Glaser A, Jentsch HG, Rosiwal S, Lüdtke A, Singer R Journal article, Original article Integralschaumgießen von Leichtmetallen (2006) Körner C, Hirschmann M, Wiehler H, Trepper A, Singer R Conference contribution Effective alloy development using Thixomolding focussing on improved creep strength of AZ91 (2006) Eibisch H, Lohmüller A, Scharrer M, Singer R Conference contribution Analog Signal Processing with Organic FETs (2006) Gay N, Fischer WJ, Halik M, Klauk H, Zschieschang U, Schmid G Journal article, Report Decyl-end-capped thiophene-phenylene oligomers as organic semiconducting materials with improved oxidation stability (2006) Ponomarenko SA, Kirchmeyer S, Elschner A, Alpatova NM, Halik M, Klauk H, Zschieschang U, Schmid G Journal article, Report A novel route towards graphite products via powder injection moulding of carbon mesophase using a partially water-soluble binder system (2006) Derfuß B, Gruhl M, Rottmair CA, Volek A, Singer R Conference contribution Investigation of the charge carrier concentration in highly aluminum doped SiC using Raman scattering (2006) Müller R, Künecke U, Thuaire A, Mermoux M, Pons M, Wellmann P Journal article