Dopant profiles in silicon created by MeV hydrogen implantation: Influence of annealing parameters (2011) Laven J, Hans Joachim S, Häublein V, Niedernostheide FJ, Ryssel H, Frey L Journal article Optical anisotropy in semipolar (Al,In)GaN laser waveguides (2010) Scheibenzuber W, Schwarz U, Veprek R, Witzigmann B, Hangleiter A Journal article Atomic layer deposited aluminum oxide films on graphite and graphene studied by XPS and AFM (2010) Speck F, Ostler M, Röhrl J, Emtsev K, Hundhausen M, Ley L, Seyller T Journal article GaN-based nanocolumn LEDs: Impact of strain engineering on the electro-optical performance (2009) Veprek RG, Steiger S, Witzigmann B Journal article Bending in HVPE grown GaN films: Origin and reduction possibilities (2007) Paskova T, Becker L, Böttcher T, Hommel D, Paskov P, Monemar B Journal article, Original article Optical Landau state mapping with in-plane electric fields (2007) Karmakar B, Schardt M, Malzer S, Arora BM, Döhler G Journal article, Original article Evolution and stability of basal plane dislocations during bulk growth of highly n-type doped versus highly p-type doped 6H-SiC (2006) Sakwe A, Müller R, Queren D, Künecke U, Wellmann P Journal article