IEEE Transactions on Power Electronics
Journal Abbreviation:  IEEE T POWER ELECTR  
ISSN: 0885-8993
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
  
Publications (13)
  
    
        
    
        
    
    
    
        
            
                
  
  A Path to Configurable Solid State Transformers and Energy Routers: Introduction to Modular Active Cell Control (2025)
  Schwanninger R, Stöcklein N, Weitz N, Yang X, März M
  Journal article
            
                
  
  The Thermal Runaway Phenomenon of Unipolar Power Semiconductors in Cryogenic Power Electronics (2025)
  Zettelmeier J, Schwanninger R, März M
  Journal article
            
                
  
  Three-Phase ARCP Inverter Using Soft-Switching with a Single Shared Inductor (2023)
  Lehmeier T, Amler A, Zhou Y, März M
  Journal article
            
                
  
  A Resonant Push-Pull DC-DC Converter With an Intrinsic Current Source Behavior For Radio Frequency Power Conversion (2022)
  Weitz N, Utzelmann S, Ditze S, März M
  Journal article
            
                
  
  Analytical Calculation of the RMS Value and the Spectrum of the DC-Link Current of a Dual-Inverter (2022)
  Schiedermeier M, Schlamp F, Rettner C, März M
  Journal article
            
                
  
  Fast Numerical Power Loss Calculation for High-Frequency Litz Wires (2021)
  Ehrlich S, Roßmanith H, Sauer M, Joffe C, März M
  Journal article
            
                
  
  An Overview of Saturable Inductors: Applications to Power Supplies (2021)
  Kaiser J, Dürbaum T
  Journal article
            
                
  
  Piezoelectric EMI Filter for Switched-Mode Power Supplies (2020)
  Hubert F, Dorsch P, Kübrich D, Dürbaum T, Rupitsch S
  Journal article, Original article
            
                
  
  Advanced energy flow control concept of an MMC for unrestricted operation as a multiport device (2019)
  Schröder M, Jäger J
  Journal article
            
                
  
  A Universal SPICE Field-Effect Transistor Model Applied on SiC and GaN Transistors (2019)
  Endruschat A, Novak C, Gerstner H, Heckel T, Joffe C, März M
  Journal article