ZEISS Rasterelektronenmikroskop GeminiSEM 560 (Zeiss Carl Microscopy GmbH)
Model: ZEISS Rasterelektronenmikroskop GeminiSEM 560 KMAT
Manufacturer: Zeiss Carl Microscopy GmbH (2024)
Location: Erlangen
Usage: FAU internal
DFG Key: 5120 Rasterelektronenmikroskope (für Remission) (REM)
Description
The microscope is ideally suited for low-dose, low-kV, and reduced-pressure operation for high-resolution SE/BSE/STEM imaging, electron backscattered diffraction (EBSD), energy-dispersive X-ray spectroscopy (EDXS), and transmission diffraction (TD) analysis on nanomaterials, beam sensitive-, non-conductive and magnetic samples. Highlights are in particular an ultra-sensitive direct detection camera for EBSD (Clarity Super, Ametek) and a customized setup consisting of an ultrafast direct detection camera (Timepix 3) combined with a flexible hexapod sample stage (SmarAct) for TD. This dedicated equipment enables optimized crystal structure and orientation analysis of beam sensitive nanomaterials. The TD setup is currently under development and expected to be operational within the next month.
- High-resolution electron column (Zeiss Gemini 3) with Schottky emitter and immersion-free optics
- Resolution: 0.5 nm at 15 kV, 1.0 nm at 0.5 kV
- Flexible and continuous tuning of acceleration voltage (0.02 – 30 kV) and beam current (3 pA – 20 nA)
- Sample biasing to improve resolution at low landing energies (0.7 nm at 1 kV landing energy)
- High-resolution In-lens detectors for SE and energy-selective BSE detection (EsB)
- Retractable 6-segment BSE detector with simultaneous measurement of up to 4 signals
- Retractable 7-segment STEM detector with simultaneous measurement of up to 4 signals
- Direct detection EBSD camera (Clarity Super, Ametek GmbH) with excellent low-kV (~3 kV) and low dose (<10 pA) performance, zero read out noise and distortion, single-electron sensitivity and high dynamic range
- Fast EDXS detector (Octane Elite Super, Ametek GmbH): Silicon Drift detector (SSD) with large detection area (70 mm²), high sensitivity for detecting low energy signals (e.g. Al L at 73 eV), good energy resolution (Mn Kα: 123 eV) and high throughput count rate (limit: 850k output cps at 2.0m input cps).
- Low vacuum mode (10 to 500 Pa) enabling simultaneous usage of high-resolution Inlens detectors (in conjunction with beam sleeves) up to 150 Pa (resolution: 1.0 nm at chamber pressure of 30Pa and 15 kV, 0.4 nm at chamber pressure of 30 Pa and 3 kV)
- Eucentric 6-axis sample stage
- Automatic load lock (80 mm)
- In chamber plasma cleaner
- Customized TD setup (under development) consisting of a hexapod stage (SmarAct GmbH) with eucentric tilt for precise and flexible sample positioning and an ultrafast direct detection camera (Timepix 3)
Involved Person(s)
Organisation(s)
Research Areas
The microscope is ideally suited for low-dose, low-kV, and reduced-pressure operation for high-resolution SE/BSE/STEM imaging, electron backscattered diffraction (EBSD), energy-dispersive X-ray spectroscopy (EDXS), and transmission diffraction (TD) analysis on nanomaterials, beam sensitive-, non-conductive and magnetic samples. Highlights are in particular an ultra-sensitive direct detection camera for EBSD (Clarity Super, Ametek) and a customized setup consisting of an ultrafast direct detection camera (Timepix 3) combined with a flexible hexapod sample stage (SmarAct) for TD. This dedicated equipment enables optimized crystal structure and orientation analysis of beam sensitive nanomaterials. The TD setup is currently under development and expected to be operational within the next month.
- High-resolution electron column (Zeiss Gemini 3) with Schottky emitter and immersion-free optics
- Resolution: 0.5 nm at 15 kV, 1.0 nm at 0.5 kV
- Flexible and continuous tuning of acceleration voltage (0.02 – 30 kV) and beam current (3 pA – 20 nA)
- Sample biasing to improve resolution at low landing energies (0.7 nm at 1 kV landing energy)
- High-resolution In-lens detectors for SE and energy-selective BSE detection (EsB)
- Retractable 6-segment BSE detector with simultaneous measurement of up to 4 signals
- Retractable 7-segment STEM detector with simultaneous measurement of up to 4 signals
- Direct detection EBSD camera (Clarity Super, Ametek GmbH) with excellent low-kV (~3 kV) and low dose (<10 pA) performance, zero read out noise and distortion, single-electron sensitivity and high dynamic range
- Fast EDXS detector (Octane Elite Super, Ametek GmbH): Silicon Drift detector (SSD) with large detection area (70 mm²), high sensitivity for detecting low energy signals (e.g. Al L at 73 eV), good energy resolution (Mn Kα: 123 eV) and high throughput count rate (limit: 850k output cps at 2.0m input cps).
- Low vacuum mode (10 to 500 Pa) enabling simultaneous usage of high-resolution Inlens detectors (in conjunction with beam sleeves) up to 150 Pa (resolution: 1.0 nm at chamber pressure of 30Pa and 15 kV, 0.4 nm at chamber pressure of 30 Pa and 3 kV)
- Eucentric 6-axis sample stage
- Automatic load lock (80 mm)
- In chamber plasma cleaner
- Customized TD setup (under development) consisting of a hexapod stage (SmarAct GmbH) with eucentric tilt for precise and flexible sample positioning and an ultrafast direct detection camera (Timepix 3)
