Journal article
(Letter)


Raman spectroscopy and electrical transport studies of free-standing epitaxial graphene: Evidence of an AB-stacked bilayer


Publication Details
Author(s): Shivaraman S, Jobst J, Waldmann D, Weber HB, Spencer M
Publisher: American Physical Society
Publication year: 2013
Volume: 87
Journal issue: 19
ISSN: 1098-0121

Abstract

We fabricate free-standing graphene structures from epitaxial graphene on silicon carbide using a photoelectrochemical (PEC) etching process. A combination of Raman spectroscopy and magnetotransport measurements was used to investigate multiterminal devices in various geometries. From the analysis of Raman data and Shubnikov-de Haas oscillations, we conclude that the buffer layer is converted into a graphene layer and, thus, monolayer graphene on SiC gets converted to a free-standing AB-stacked bilayer. The bilayer exhibits inversion-symmetry breaking because of differential doping between the layers. Additionally, lateral inhomogeneities exist in the form of domains with nonuniform mobility. The same PEC process on a pure buffer layer, however, does not yield monolayer graphene.



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How to cite
APA: Shivaraman, S., Jobst, J., Waldmann, D., Weber, H.B., & Spencer, M. (2013). Raman spectroscopy and electrical transport studies of free-standing epitaxial graphene: Evidence of an AB-stacked bilayer. Physical Review B, 87(19). https://dx.doi.org/10.1103/PhysRevB.87.195425

MLA: Shivaraman, Shriram, et al. "Raman spectroscopy and electrical transport studies of free-standing epitaxial graphene: Evidence of an AB-stacked bilayer." Physical Review B 87.19 (2013).

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