Journal article


Analysis of interface trap parameters from double-peak conductance spectra taken on N-implanted 3C-SiC MOS capacitors


Publication Details
Author(s): Krieger M, Beljakowa S, Trapaidze L, Frank T, Weber HB, Pensl G, Hatta N, Abe M, Nagasawa H, Schöner A
Publisher: Wiley-VCH Verlag
Publication year: 2008
Volume: 245
Journal issue: 7
Pages range: 1390-1395
ISSN: 0370-1972
eISSN: 1521-3951

Abstract

3C-SiC/SiO2 capacitors are fabricated by over-oxidation of an implanted Gaussian nitrogen (N) profile and investigated by conductance spectroscopy. An unexpected double peak structure is observed in the conductance spectra indicating two types of independent traps at different energy positions in the bandgap, which change their charge state with identical time constant. A theoretical model is developed assuming two independent distributions of interface traps in the bandgap of 3C-SiC with different trap parameters. The experimental G/ω-V and C-V spectra are simulated and the trap parameters are determined on the basis of this model. © 2008 Wiley-VCH Verlag GmbH & Co. KGaA.



Focus Area of Individual Faculties


How to cite
APA: Krieger, M., Beljakowa, S., Trapaidze, L., Frank, T., Weber, H.B., Pensl, G.,... Schöner, A. (2008). Analysis of interface trap parameters from double-peak conductance spectra taken on N-implanted 3C-SiC MOS capacitors. Physica Status Solidi B-Basic Solid State Physics, 245(7), 1390-1395. https://dx.doi.org/10.1002/pssb.200844062

MLA: Krieger, Michael, et al. "Analysis of interface trap parameters from double-peak conductance spectra taken on N-implanted 3C-SiC MOS capacitors." Physica Status Solidi B-Basic Solid State Physics 245.7 (2008): 1390-1395.

BibTeX: Download


External Organisations
Share link
Last updated on 2017-09-25 at 02:46
PDF downloaded successfully