Journal article


Growth of 3C-SiC Bulk Material by the Modified Lely-Method


Publication Details
Author(s): Semmelroth Kurt, Krieger Michael, Pensl Gerhard, Nagasawa H., Püsche R., Hundhausen Martin, Ley Lothar, Nerding M., Strunk H. P.
Publisher: Trans Tech Publications
Publication year: 2004
Volume: 457-460
Pages range: 151
ISSN: 0255-5476
eISSN: 1662-9752

Abstract
The growth of cubic 3C-SiC single crystals by the modified Lely method is reported. Free-standing 200μm thick 3C-SiC epilayers were employed as seed crystals. The source material consisted of stoichiometric SiC; in addition, a separate Si source was deposited in the furnace at a temperature of about 1500°C. The temperature of the seed crystal was kept in the range of (1850-1950)°C. The growth rate is equal to 0.05mm/h and a nitrogen donor concentration of (2-6) ×10 18 cm -3 is determined in the grown 3C-SiC.
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