High Mobility and Low Density of Trap States in Dual-Solid-Gated PbS Nanocrystal Field-Effect Transistors

Nugraha MI, Häusermann R, Bisri SZ, Matsui H, Sytnyk M, Heiß W, Takeya J, Loi MA (2015)


Publication Status: Published

Publication Type: Journal article, Original article

Publication year: 2015

Journal

Publisher: Wiley-VCH Verlag

Book Volume: 27

Pages Range: 2107-2112

Journal Issue: 12

DOI: 10.1002/adma.201404495

Abstract

Dual-gated PbS nanocrystal field-effect transistors employing SiO and Cytop as gate dielectrics are fabricated. The obtained electron mobility (0.2 cm V s) and the high on/off ratio (10-10), show that the controlled nanocrystal assembly (obtained with self-assembled monolayers), as well as the trap density reduction (using Cytop as dielectric), are crucial steps for the future application of nanocrystals.

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How to cite

APA:

Nugraha, M.I., Häusermann, R., Bisri, S.Z., Matsui, H., Sytnyk, M., Heiß, W.,... Loi, M.A. (2015). High Mobility and Low Density of Trap States in Dual-Solid-Gated PbS Nanocrystal Field-Effect Transistors. Advanced Materials, 27(12), 2107-2112. https://doi.org/10.1002/adma.201404495

MLA:

Nugraha, Mohamad Insan, et al. "High Mobility and Low Density of Trap States in Dual-Solid-Gated PbS Nanocrystal Field-Effect Transistors." Advanced Materials 27.12 (2015): 2107-2112.

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