Analysis of graphitization during physical vapor transport growth of silicon carbide
Wellmann P, Herro ZG, Sakwe A, Masri P, Bogdanov M, Karpov S, Kulik A, Ramm M, Makarov Y (2004)
Publication Language: English
Publication Status: Published
Publication Type: Journal article, Original article
Publication year: 2004
Journal
Publisher: Trans Tech Publications
City/Town: Switzerland
Book Volume: 457-460
Pages Range: 55-58
Conference Proceedings Title: Materials Science Forum (Volumes 457-460)
Event location: Lyon
DOI: 10.4028/www.scientific.net/MSF.457-460.55
Abstract
We have analyzed the graphitization process of the source material during physical vapor transport growth of SiC by comparison of experimental monitoring (digital x-ray imaging, and C-13-labeling) and 2D numerical modeling of the sublimation and recrystallization process. Growth runs under different conditions (temperature and inert gas pressure) were used for verification of the calculated source evolution. Effects like formation of a condensed disk on top of the source material, consumption of SiC powder close to the hot graphite walls, mass transport through the core part and along the side walls could be confirmed. The rate of the sublimation and recrystallization effect, however, was overestimated by the model in the range of the experimental parameters in this study. Regardless of the latter, the crystal growth rate was described very well (modeling: 280mum/h, experiment: 310mum/h and 300mum/h).
Authors with CRIS profile
Involved external institutions
Soft-Impact, Ltd.
Russian Federation (RU)
Semiconductor Technology Research, Inc.
United States (USA) (US)
University of Montpellier / Université Montpellier
France (FR)
Russian Federation (RU)
Semiconductor Technology Research, Inc.
United States (USA) (US)
University of Montpellier / Université Montpellier
France (FR)
How to cite
APA:
Wellmann, P., Herro, Z.G., Sakwe, A., Masri, P., Bogdanov, M., Karpov, S.,... Makarov, Y. (2004). Analysis of graphitization during physical vapor transport growth of silicon carbide. Materials Science Forum, 457-460, 55-58. https://dx.doi.org/10.4028/www.scientific.net/MSF.457-460.55
MLA:
Wellmann, Peter, et al. "Analysis of graphitization during physical vapor transport growth of silicon carbide." Materials Science Forum 457-460 (2004): 55-58.
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